The Galaxy Note 7 was launched by Samsung earlier this month and will arrive in Brazil in the coming weeks. One of the big news is that we finally have the basic model with 64 GB of storage, while previous generations of the line Note came with 32 GB of memory. Since the Galaxy S6 that Samsung uses UFS 2.0 standard modules that promise to deliver performance three times the standard eMMC 5.1 used by other manufacturers. However, the memory used in Note 7 may not be as fast as expected.
The tests performed by the site GSM Arena show that there has been no breakthrough in the memory used by Samsung in this generation and in some cases it ends being slower than the memory found in the Galaxy Note 5.
sequentially read
sequential Writing
in the sequential read test the Galaxy Note 7 was second fastest, getting stuck in the Galaxy S7 Edge. In the sequential write test the new release of Samsung loses not only for the S7 Edge, but also for the Galaxy Note 5 which is first. In the external memory test using a microSD card Class 10 UHS-I Transcend, there was no difference in the test.
Shuffle
Random Writing
in random read and write tests is where the memory of the Galaxy Note 7 shows more worrying results. In the first test we see that the Galaxy Note 5 shows a scanning performance 60% faster than the current phablet Samsung’s high-end. While the writing test we see a margin of 20% for older model line. The test with the external card follows the same as before with the same performance of the company’s devices.
Samsung recently said it is working on a new generation of its UFS memory, but it only will be ready in beginning of 2018. With this, the first smartphone company to bring a considerable advance in this scenario would be the Galaxy S9. Will the Galaxy S8 receive the same memory of 64 GB used in Galaxy Note 7?
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